Vender servidor Dell/Xfusion/Huawei,De China.
| Número de parte | Capacidad | Detalles |
| 0251Y129 | 128ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5, RDIMM,128ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,4Rango(4G * 4 bits),3DS,Doméstico&De ultramar |
| 0251Y129 | 128ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5, RDIMM,128ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,4Rango(4G * 4 bits),3DS,Doméstico&De ultramar |
| 0620Y009 | 128ES | Módulo de memoria,DDR5-RDIMM,128ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,4Rango(4G * 4 bits),3DS |
| 0620Y009 | 128ES | Módulo de memoria,DDR5-RDIMM,128ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,4Rango(4G * 4 bits),3DS |
| 0620Y009-001 | 128ES | Módulo de memoria,DDR5-RDIMM,128ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,4Rango(4G * 4 bits),3DS,Samsung 1ynm |
| 0620Y033 | 128ES | Módulo de memoria,DDR5-RDIMM,128ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,4Rango(4G * 4 bits),3DS |
| 0251Y064 | 16ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,1Rango(2G * 8 bits),De ultramar |
| 0251Y146 | 16ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,1Rango(2G * 8 bits),0620Y003-xh-jwy samsung 1ynm |
| 0251Y150 | 16ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,1Rango(2G * 8 bits),De ultramar |
| 0620Y003 | 16ES | Módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,1Rango(2G * 8 bits) |
| 0620Y003-001 | 16ES | Módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,1Rango(2G * 8 bits),P/N especificado Samsung 1ynm |
| 0620Y003-002 | 16ES | Módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,1Rango(2G * 8 bits),P/N especificado Dedicated-Hynix 1Anm |
| 0620Y027 | 16ES | Módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,1Rango(2G * 8 bits) |
| 0620Y068 | 16ES | Módulo de memoria,DDR5-RDIMM,16ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,1Rango(2G * 8 bits),Código de especificación |
| 0620Y010 | 256ES | Módulo de memoria,DDR5-RDIMM,256ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,8Rango(8G * 4 bits),3DS |
| 0251Y063 | 32ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.42ns,4800000KHz,1.1V,2Rango(2G * 8 bits),De ultramar |
| 0251Y063 | 32ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.42ns,4800000KHz,1.1V,2Rango(2G * 8 bits),De ultramar |
| 0251Y143 | 32ES | Módulo de memoria general,2258 V7, módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(2G * 8 bits),Tres fábricas originales Código,Exclusivo en el extranjero |
| 0620Y005 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.42ns,4800000KHz,1.1V,2Rango(2G * 8 bits) |
| 0620Y005-001 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.42ns,4800000KHz,1.1V,2Rango(2G * 8 bits),P/N especificado Samsung 1ynm |
| 0620Y005-002 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.42ns,4800000KHz,1.1V,2Rango(2G * 8 bits),P/N especificado Dedicated-Hynix 1Anm |
| 0620Y029 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(2G * 8 bits) |
| 0620Y029-001 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(2G * 8 bits),SK Hynix 1anm,P/N especificado dedicado |
| 0620Y029-002 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(2G * 8 bits),Samsung 1anm dedicado especificado P/N |
| 0620Y069 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(2G * 8 bits),Código de especificación |
| 0620Y071 | 32ES | Módulo de memoria,DDR5-RDIMM,32ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(2G * 8 bits),Código de especificación |
| 0620Y019 | 48ES | Módulo de memoria,DDR5-RDIMM,48ES,288alfiler,0.416ns,4800000KHz,1.1V,ECC,2Rango(3G * 8 bits) |
| 0620Y030 | 48ES | Módulo de memoria,DDR5-RDIMM,48ES,288alfiler,0.357ns,5600000KHz,1.1V,2Rango(3G * 8 bits) |
| 0251Y062 | 64ES | Módulo de memoria general,2288H V7, módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(4G * 4 bits),De ultramar |
| 0251Y144 | 64ES | Módulo de memoria general,2258 V7, módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(4G * 4 bits),Tres fábricas originales Código,Exclusivo en el extranjero |
| 0620Y006 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(4G * 4 bits) |
| 0620Y006-001 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(4G * 4 bits),P/N especificado Samsung 1ynm |
| 0620Y006-002 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(4G * 4 bits),P/N especificado Dedicated-Hynix 1Anm |
| 0620Y006-006 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(4G * 4 bits),Tres fábricas originales Código |
| 0620Y031 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(4G * 4 bits) |
| 0620Y031-003 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(4G * 4 bits),Samsung 1anm |
| 0620Y031-004 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(4G * 4 bits),SK Hynix 1anm |
| 0620Y070 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.42ns,4800000KHz,1.1V,ECC,2Rango(4G * 4 bits),Código de especificación |
| 0620Y072 | 64ES | Módulo de memoria,DDR5-RDIMM,64ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(4G * 4 bits),Código de especificación |
| 0620Y026 | 96ES | Módulo de memoria,DDR5-RDIMM,96ES,288alfiler,0.416ns,4800000KHz,1.1V,ECC,2Rango(6G * 4 bits) |
| 0620Y032 | 96ES | Módulo de memoria,DDR5-RDIMM,96ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(6G * 4 bits) |
| 0620Y032 | 96ES | Módulo de memoria,DDR5-RDIMM,96ES,288alfiler,0.357ns,5600000KHz,1.1V,ECC,2Rango(6G * 4 bits) |